BTA330B-800BT

Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dIT/dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where high junction operating temperature capability is required.

Features and Benefits
  •  3Q technology for improved noise immunity
  •  High commutation capability with maximum false trigger immunity
  •  High junction operating temperature capability (Tj(max) = 150 °C)
  •  High voltage capability
  •  High current capability
  •  Less sensitive gate for highest noise immunity
  •  Triggering in three quadrants only
  •  Very high immunity to false turn-on by dV/dt and fast transients
  •  Surface mountable plastic package
  •  Package is RoHS compliant
Applications
  •  Heating controls
  •  High power motor control
  •  High power switching
  •  Applications subject to high temperature (Tj(max) = 150 °C)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA330B-800BT VDRM  repetitive peak off-state voltage       800 V
IT(RMS)  RMS on-state current full sine wave; Tmb ≤ 120 °C;     30 A
ITSM  non-repetitive peak on-state 
 current		 full sine wave; Tj(init) = 25 °C; tp = 20 ms;     270 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     297 A
Tj  junction temperature       150 °C
IGT  gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;Tj = 25 °C;     50 mA
VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C;     50 mA
VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C;     50 mA
IL  latching current VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C;		     80 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C;		     100 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C;		     80 mA
IH  holding current VD = 12 V; Tj = 25 °C;     75 mA
VT on-state voltage IT = 42 A; Tj = 25 °C;   1.2 1.5 V
dVD/dt  rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit		 4000     V/µs
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit		 2000     V/µs
dIcom/dt rate of change of
commutating current		 VD = 400 V; Tj = 125 °C; IT(RMS) = 30 A;
dVcom/dt = 20 V/μs; (snubberless
condition); gate open circuit		 20     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A;
dVcom/dt = 20 V/μs; (snubberless
condition); gate open circuit		 15     A/ms
Datasheet
Chemical Content

Chemical Content - BTA330B-800BT

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