BTA45-800B

Planar passivated four quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C). It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
• High current TRIAC
• Low thermal resistance
• High junction operating temperature capability (Tj(max) = 150 °C)
• High voltage capability
• Planar passivated for voltage ruggedness and reliability
• Insulated tab rated at 2500 V rms
Applications
• High current / high surge applications
• High power / industrial controls -- e.g. heating, motors, lighting
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA45-800B VDRM repetitive peak offstate voltage       800 V
I T(RMS) RMS on-state current square-wave pulse; Tmb ≤ 96 °C; Fig. 1; Fig. 2; Fig. 3     45 A
ITSM non-repetitive peak on-state current full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5     450 A
non-repetitive peak forward current full sine wave; tp = 16.7 ms; Tj(init) = 25 °C;     495 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+ Tj = 25 °C; Fig. 7     50 mA
VD = 12 V; IT = 0.1 A; T2+ G- Tj = 25 °C; Fig. 7     50 mA
VD = 12 V; IT = 0.1 A; T2-  G-  Tj = 25 °C; Fig. 7     50 mA
VD = 12 V; IT = 0.1 A; T2- G+ Tj = 25 °C; Fig. 7     70 mA
VT on-state voltage IT = 63.6 A; Tj = 25 °C; Fig. 10   1.3 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 20A; dVcom/dt = 20 V/μs; gate open circuit 10     A/ms
Datasheet
Chemical Content

Chemical Content - BTA45-800B

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