BYC8B-600P
Hyperfast power diode in a SOT404 (D2PAK) surface-mountable plastic package.
Features and Benefits
- Fast switching
- Surface-mountable package
- Low leakage current
- Low reverse recovery current
- Low thermal resistance
- Reduces switching losses in associated MOSFET
Applications
- Continuous Current Mode (CCM) Power Factor Correction (PFC)
- Half-bridge/full-bridge switched-mode power supplies
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BYC8B-600P | VRRM | repetitive peak reverse voltage | 600 | V | |||
IF(AV) | average forward current | δ = 0.5 ; Tmb ≤ 130 °C; square-wave pulse | 8 | A | |||
IFRM | repetitive peak forward current | δ = 0.5 ; tp = 25 µs; Tmb ≤ 130 °C; square-wave pulse | 16 | A | |||
IFSM | non-repetitive peak forward current | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse | 91 | A | |||
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 100 | A | |||||
VF | forward voltage | IF = 8 A; Tj = 25 °C | 3.4 | V | |||
IF = 8 A; Tj = 125 °C | 1.5 | 1.9 | V | ||||
IF = 8 A; Tj = 150 °C | 1.4 | V | |||||
trr | reverse recovery time | IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C | 12 | 18 | ns | ||
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C | 19 | ns |