Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
- Fast switching
- Isolated plastic package
- Low leakage current
- Low forward voltage drop
- Low thermal resistance
- Soft recovery characteristic
- Enhanced avalanche energy capability
- High frequency switched-mode power supplies
- Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|---|
| BYV10EX-600P | VRRM | repetitive peak reverse voltage | 600 | V | |||
| IF(AV) | average forward current | δ = 0.5 ; square-wave pulse; Th ≤ 71 °C; Fig. 1; Fig. 2; Fig. 3 | 10 | A | |||
| IFRM | repetitive peak forward current | δ = 0.5 ; tp = 25 μs; Th ≤ 71 °C; square-wave pulse | 20 | A | |||
| IFSM | non-repetitive peak forward current | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse | 75 | A | |||
| tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 83 | A | |||||
| VF | forward voltage | IF = 10 A; Tj = 25 °C | 1.55 | 2 | V | ||
| IF = 10 A; Tj = 150 °C | 1.6 | V | |||||
| trr | reverse recovery time | IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C | 35 | 50 | ns | ||
| IF = 10 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C | 50 | ns | |||||
| IF = 10 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C | 78 | ns | |||||
| IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C | 42 | ns | |||||
| EAS | non-repetitive avalanche energy | IR = 1.2 A; Tj(init) = 25 °C; L = 15 mH | 10.8 | mJ |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| BYV10EX-600P |  TO220F-2L |
Horizontal, Rail Pack | Volume production | Standard Marking | BYV10EX-600PQ | 9340 689 14127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| BYV10EX-600P | 9340 689 14127 | BYV10EX-600PQ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| BYV10EX-600P | BYV10EX-600PQ | BYV10EX-600P |   |
NA | NA |
Chemical Content - BYV10EX-600P
As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
