EC103D1W

Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT223 surface mountable plastic package.

Features and Benefits
  • Planar passivated for voltage ruggedness and reliability
  • Ultra sensitive gate
  • Surface mountable package
Applications
  • Electronic ballasts
  • Safety shut down and protection circuits
  • Sensing circuits
  • Smoke detectors
  • Switched Mode Power Supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
EC103D1W VDRM repetitive peak off-state voltage       400 V
VRRM repetitive peak reverse voltage       400 V
IT(AV) average on-state current half sine wave; Tsp ≤ 114 °C     0.5 A
IT(RMS) RMS on-state current half sine wave; Tsp ≤ 114 °C     0.8 A
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms     8 A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     9 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C   3 12 µA
IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C   2 6 mA
IH holding current VD = 12 V; Tj = 25 °C   2 5 mA
dVD/dt rate of rise of off-state voltage VDM = 268 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit   150   V/µs
Datasheet
Chemical Content

Chemical Content - EC103D1W

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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