TB100
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO92) plastic package intended for use in low power SMPS emitter switching circuits.
Features and Benefits
- Fast switching
- High base current drive capability
- High voltage capability
- Very low switching and conduction losses
Applications
- Emitter-switched low power SMPS circuits
- Self Oscillating Power Supplies
- AC-DC converters
- DC-AC inverters
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
TB100 | VCESM | collector-emitter peak voltage | VBE = 0 V | 700 | V | ||
IC | collector current | DC | 1 | A | |||
Ptot | total power dissipation | Tlead ≤ 25 °C | 2 | W | |||
hFE | DC current gain | IC = 10 mA; VCE = 5 V; Tlead = 25 °C | 12 | 22 | 32 | ||
IC = 100 mA; VCE = 5 V; Tlead = 25 °C | 14 | 24 | 34 | ||||
IC = 0.75 A; VCE = 5 V; Tlead = 25 °C | 12 | 15.5 | 20 | ||||
tf | fall time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 μ; VBB = -4 V; Tlead = 25 °C | 320 | ns |