TB100

High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO92) plastic package intended for use in low power SMPS emitter switching circuits.

Features and Benefits
  • Fast switching
  • High base current drive capability
  • High voltage capability
  • Very low switching and conduction losses
Applications
  • Emitter-switched low power SMPS circuits
  • Self Oscillating Power Supplies
  • AC-DC converters
  • DC-AC inverters
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
TB100 VCESM collector-emitter peak voltage VBE = 0 V     700 V
IC collector current DC     1 A
Ptot total power dissipation Tlead ≤ 25 °C     2 W
hFE DC current gain IC = 10 mA; VCE = 5 V; Tlead = 25 °C 12 22 32  
IC = 100 mA; VCE = 5 V; Tlead = 25 °C 14 24 34  
IC = 0.75 A; VCE = 5 V; Tlead = 25 °C 12 15.5 20  
tf fall time IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 μ; VBB = -4 V; Tlead = 25 °C   320   ns
Datasheet

Chemical Content - TB100

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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