WND45P16W

Standard reverse recovery power diode in a TO247-2L package.

Features and Benefits
• Low forward voltage drop
• Low leakage current
• High voltage capability
• High inrush current capability
Applications
• Input rectifier
• Bypass diode
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WND45P16W VRRM repetitive peak reverse voltage       1600 V
IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 139 °C; Fig. 1; Fig. 2; Fig. 3     45 A
IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
Fig. 4		     475 A
    tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
Fig. 4		     523 A
VF forward voltage IF = 45 A; Tj = 25 °C; Fig. 6   1.2 1.4 V
IF = 45 A; Tj = 150 °C; Fig. 6   1.1 1.3 V
Datasheet
Chemical Content

Chemical Content - WND45P16W

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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