Market Demands
- Highest efficiency energy conversion
- Minimise use of cooling fans
- High reliability
- High inverter temperatures ask for high Tj(max) power semiconductor devices
- Space reduction, SMD packages for lower power devices
- Use of IGBTs as the Switch in the boost converter and in the bridge
- Low EMI
System Overview
Application Focus
For More Information
IGBTs:
Silicon Carbide Diodes:
Hyperfast diodes:
Ultrafast diodes:
Standard Power diodes:
WeEn Solutions
- IGBTs:
- High-speed with low switching losses
- Fast and soft recovery anti-parallel diode
- Positive VCE(sat) temperature coefficient
- Trench gate field-stop technology
- Halogen Free package and Pb-free lead finish, RoHS compliant
- Low thermal resistance
- Diodes:
- 600V/30A SABERTM Diode and 1600V/45A Standard Diode in one TO-247 package for space saving and cost reduction
- Standard diodes for Bypass application, feature low VF for low conduction losses
- Fast recovery diodes FRD, Ultrafast and Hyperfast, for high frequency switching and low switching losses
- SiC Diodes for benchmark switching behaviour, independent of temperature
Highlight Package Products
