TYN160WP-1600T
Planar passivated Silicon Controlled Rectifier in a TO247 Plus plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.
TYN100WP-1600T
Planar passivated Silicon Controlled Rectifier in a TO247 Plus plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.
ESDAHD712BE2
The ESDAHD712BE2 is designed for asymmetrical (12V to -7V) protection in multi-point data transmission standard RS-485 applications. The ESDAHD712BE2 can be used to protect devices from transient voltages resulting from electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges.
BTA440Z-800BT
Planar passivated high commutation three quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.
TYN50W-1600T
Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability，high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).
BYC30W-1200P
EEPPTM- Efficiency Enhanced Pt Planar diode in a 2-leads TO247-2L plastic package.
WNSC2D10650T
Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.
WG50N65DHW
High speed IGBT with anti-parallel diode in TO247 package.
WHMH116T16
Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
WHMH80T16
Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
