Senior Development Engineer (MOSFET or FRD design engineer)(Shanghai)

Job Location
Shanghai
Category
R&D
Employment type
Full Time

Key Areas of Accountability:

  • Good understanding of semiconductor power device physics and state-of-the-art technology used in the power discrete industry.
  • Be familiar with semiconductor power device TCAD process and electrical performance simulation, such as Silvaco or Sentaurus workbench.
  • Be familiar with mask design is preferred, such as Candence/L-edit/others.

Requirements:

  • Education Background: Bachelor’s degree in electrical engineering, Microelectronics, Semiconductor device physics or related area, Master or PhD in Microelectronics or Semiconductors is preferred.
  • Minimum 3 years working experience in Semiconductor power device development. Candidate with one of the following developing experience, such as SBD, FRD, Thyristor, MOSFET or IGBT is preferred.
  • Hand-on power device electrical characterization experience.