ACT108-600E

AC Thyristor power switch in a SOT54 plastic package with self-protective capabilities against low and high energy transients

Features and Benefits
  • Exclusive negative gate triggering
  • Full cycle AC conduction
  • Remote gate separates the gate driver from the effects of the load current
  • Very high noise immunity
  • Safe clamping of low energy over-voltage transients
  • Self-protective turn-on during high energy voltage transients
Applications
  • Fan motor circuits
  • Pump motor circuits
  • Lower-power highly inductive, resistive and safety loads
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
ACT108-600E VDRM repetitive peak off-state voltage       600 V
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 71 °C     0.8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     13 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     14.3 A
Tj junction temperature       125 °C
VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state; ten pulses on each voltage polarity; 20s or more between successive pulses;     2.5 kV
IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C 1   10 mA
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C 1   10 mA
IH holding current VD = 12 V; Tj = 25 °C     25 mA
VT on-state voltage IT = 1.1 A; Tj = 25 °C     1.3 V
VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 650     V
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 2000     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 0.8 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 0.5     A/ms
Datasheet
Chemical Content

Chemical Content - ACT108-600E

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