ACTT2W-800ETN

Planar passivated AC Thyristor Triac power switch in a SOT223 surface-mountable plastic package with self-protective capabilities against low and high energy transients. This "series ETN" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
• Clamping structure ensuring safe high over-voltage withstand capability
• High junction operating temperature capability (Tj(max) = 150 °C)
• High minimum IGT for guaranteed immunity to gate noise
• Full cycle AC conduction
• Over-voltage withstand capability to IEC 61000-4-5
• Pin compatible with standard triacs
• Planar passivated for voltage ruggedness and reliability
• Protective self turn-on capability for high energy transients
• Safe clamping capability for low energy over-voltage transients
• Less sensitive gate for high noise immunity
• Triggering in three quadrants only
• Very high immunity to false turn-on by dV/dt and IEC 61000-4-4 fast transient
• Package meets UL94V0 flammability requirement
• Package is RoHS compliant
Applications
• AC pumps and fans
• High power solenoids
• Highly inductive, resistive and safety loads
• Large and small appliances (White Goods)
• Applications subject to high temperature (Tj(max) = 150 °C)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
ACTT2W-800ETN VDRM repetitive peak offstate voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tsp ≤ 106 °C; Fig. 1; Fig. 2; Fig. 3     2 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5     18 A
non-repetitive peak forward current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     20 A
IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C; Fig. 8     10 mA
VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8     10 mA
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8     10 mA
VT on-state voltage IT = 3 A; Tj = 25 °C; Fig. 11     2 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; exponential waveform; gate open circuit 200     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 2 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition 1     A/ms
Datasheet
Chemical Content

Chemical Content - ACTT2W-800ETN

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

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