BT148-500R
Planar passivated SCR with sensitive gate in a SIP3 (SOT82) plastic package intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Features and Benefits
- Sensitive gate
- Planar passivated for voltage ruggedness and reliability
- Direct triggering from low power drivers and logic ICs
Applications
- Adapters
- Battery powered applications
- Industrial automation
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BT148-500R | VDRM | repetitive peak off-state voltage | 500 | V | |||
VRRM | repetitive peak reverse voltage | 500 | V | ||||
IT(AV) | average on-state current | half sine wave; Tmb ≤ 113 °C | 2.5 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 113 °C | 4 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms | 35 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 38 | A | |||||
Tj | junction temperature | 125 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 15 | 200 | µA | ||
IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 0.17 | 10 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C | 0.1 | 6 | mA | ||
dVD/dt | rate of rise of off-state voltage | VDM = 268 V; Tj = 125 °C; RGK = 100 μ; (VDM = 67% of VDRM); exponential waveform | 50 | V/µs |