BT151U-650C

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT533 (IPAK) plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance.

Features and Benefits
  • High bidirectional blocking voltage capability
  • High thermal cycling performance
Applications
  • Ignition circuits
  • Motor control
  • Protection circuits
  • Voltage regulation
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT151U-650C VDRM repetitive peak off-state voltage       650 V
VRRM repetitive peak reverse voltage       650 V
IT(AV) average on-state current half sine wave; Tmb ≤ 104 °C     7.5 A
IT(RMS) RMS on-state current half sine wave; Tmb ≤ 104 °C     12 A
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms     100 A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     110 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C   2 15 mA
IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C   10 40 mA
IH holding current VD = 12 V; Tj = 25 °C   7 20 mA
dVD/dt rate of rise of off-state voltage VDM = 436 V; Tj = 125 °C; RGK = 100 μ; (VDM = 67% of VDRM); exponential waveform 200 1000   V/µs
VDM = 436 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 50 130   V/µs
Datasheet
Chemical Content

Chemical Content - BT151U-650C

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Disclaimer

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