BT151X-800R
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking voltage and high current surge capability with high thermal cycling performance.
Features and Benefits
- High bidirectional blocking voltage capability
- High current surge capability
- High thermal cycling performance
- Isolated mounting base package
- Planar passivated for voltage ruggedness and reliability
Applications
- Capacitive Discharge Ignition (CDI)
- Crowbar protection
- Inrush protection
- Motor control
- Voltage regulation
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BT151X-800R | VDRM | repetitive peak off-state voltage | 800 | V | |||
VRRM | repetitive peak reverse voltage | 800 | V | ||||
IT(AV) | average on-state current | half sine wave; Th ≤ 69 °C | 7.5 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Th ≤ 69 °C | 12 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms | 120 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 132 | A | |||||
Tj | junction temperature | 125 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 2 | 15 | mA | ||
IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 10 | 40 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C | 7 | 20 | mA | ||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; RGK = 100 μ; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 200 | 1000 | V/µs | ||
VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform | 50 | 130 | V/µs |