BT152-800R

Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.

Features and Benefits
  • High thermal cycling performance
  • High voltage capability
  • Planar passivated for voltage ruggedness and reliability
  • Very high current surge capability
Applications
  • Ignition circuits
  • Motor control
  • Protection circuits e.g. SMPS inrush current
  • Voltage regulation
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT152-800R VDRM repetitive peak off-state voltage       800 V
VRRM repetitive peak reverse voltage       800 V
IT(AV) average on-state current half sine wave; Tmb ≤ 103 °C     13 A
IT(RMS) RMS on-state current half sine wave     20 A
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms     200 A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     220 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C   3 32 mA
IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C   25 80 mA
IH holding current VD = 12 V; Tj = 25 °C   15 60 mA
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 200 300   V/µs
Datasheet
Chemical Content

Chemical Content - BT152-800R

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Disclaimer

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