BT152X-1200T

Planar passivated Silicon Controlled Rectifier (SCR) in a TO220F "full pack" plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.

Features and Benefits
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • High thermal cycling performance
  • Planar passivated for voltage ruggedness and reliability
  • High blocking voltage capability
  • Very high current surge capability
  • RoHS compliant
  • Epoxy package meets UL94V-0 which guaranteed by epoxy molding compound
  • Isolated package (Viso = 2500VRMS)
  • UL 1557 certified (file ref. E346397)
Applications
  • DC Motor control
  • Power converter
  • Lighting and temperature control
  • Softstart AC motor control
  • AC power control
  • Solid State Relay (SSR)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT152X-1200T VDRM  repetitive peak off-state voltage       1200 V
VRRM  repetitive peak reverse voltage       1200 V
IT(AV)  average on-state current  half sine wave; Th ≤ 67 °C     20 A
IT(RMS)  RMS on-state current  half sine wave; Th ≤ 67 °C     31 A
ITSM  non-repetitive peak on-state 
 current		  half sine wave; Tj(init) = 25 °C; tp = 10 ms     250 A
 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     275 A
Tj  junction temperature   -40   150 °C
IGT  gate trigger current  VD = 12 V; IT = 0.1 A; Tj = 25 °C     35 mA
IL  latching current  VD = 12 V; IG = 0.1 A; Tj = 25 °C     80 mA
IH  holding current  VD = 12 V; Tj = 25 °C     60 mA
dVD/dt  rate of rise of off-state voltage  VDM = 804 V; Tj = 150 °C; (VDM = 67% of VDRM);
 exponential waveform; gate open circuit		 1000     V/µs
Datasheet
Chemical Content

Chemical Content - BT152X-1200T

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.