BT152X-400R
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.
Features and Benefits
- Good blocking voltage capability
- High thermal cycling performance
- Isolated mounting base package
- Planar passivated for voltage ruggedness and reliability
- Very high current surge capability
Applications
- Capacitive Discharge Ignition (CDI)
- Crowbar protection
- Inrush protection
- Motor control
- Voltage regulation
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BT152X-400R | VDRM | repetitive peak off-state voltage | 400 | V | |||
VRRM | repetitive peak reverse voltage | 400 | V | ||||
IT(AV) | average on-state current | half sine wave; Th ≤ 43 °C | 13 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Th ≤ 43 °C | 20 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms | 200 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 220 | A | |||||
Tj | junction temperature | 125 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 3 | 32 | mA | ||
IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 25 | 80 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C | 15 | 60 | mA | ||
dVD/dt | rate of rise of off-state voltage | VDM = 268 V; Tj = 125 °C; (VDM = 67% of VDRM); gate open circuit; exponential waveform | 200 | 300 | V/µs |