BT153B-1200T-A
Planar passivated Silicon Controlled Rectifier (SCR) in a TO-263 surface mountable plastic package intended for use in applications requiring very high inrush current capability and high bidirectional blocking voltage capability. This product is qualified to AEC-Q101 standard for use in automotive applications.
Features and Benefits
• High junction operating temperature capability (Tj(max) = 150 °C)
• AEC-Q101 compliant
• Planar passivated for voltage ruggedness and reliability
• High voltage capacity
• Very high current surge capability
• Surface mountable package
Applications
• Automotive battery charger, On Board Charger & Off Board Charger
• DC motor control
• Power converter
• Solid State Relay (SSR)
• Uninterruptible Power Supply (UPS)
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
BT153B-1200T-A | VDRM | repetitive peak off-state voltage | 1200 | V | |||
VRRM | repetitive peak reverse voltage | 1200 | V | ||||
IT(AV) | average on-state current | half sine wave; Tmb ≤ 119 °C | 30 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 119 °C | 47 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms | 350 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 385 | A | |||||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 50 | mA | |||
IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 100 | mA | |||
IH | holding current | VD = 12 V; Tj = 25 °C | 80 | mA | |||
dVD/dt | rate of rise of off-state voltage | VDM = 804 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit |
1000 | V/µs |