Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 surface mountable plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.
- High junction operating temperature capability (Tj(max) = 150 °C)
- Planar passivated for voltage ruggedness and reliability
- High voltage capacity
- Very high current surge capability
- Surface mountable package
- DC motor control
- Power converter
- Solid State Relay (SSR)
- Uninterruptible Power Supply (UPS)
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| BT153B-1200T | VDRM | repetitive peak off-state voltage | 1200 | V | |||
| VRRM | repetitive peak reverse voltage | 1200 | V | ||||
| IT(AV) | average on-state current | half sine wave; Tmb ≤ 119 °C | 30 | A | |||
| IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 119 °C | 47 | A | |||
| ITSM | non-repetitive peak on-state current |
half sine wave; Tj(init) = 25 °C; tp = 10 ms | 350 | A | |||
| half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 385 | A | |||||
| Tj | junction temperature | -40 | 150 | °C | |||
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 50 | mA | |||
| IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 100 | mA | |||
| IH | holding current | VD = 12 V; Tj = 25 °C | 80 | mA | |||
| dVD/dt | rate of rise of off-state voltage | VDM = 804 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit |
1000 | V/µs |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| BT153B-1200T |
TO263 |
STANDARD MARK SMD | Volume production | Standard Marking | BT153B-1200TJ | 9340 734 84118 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| BT153B-1200T | 9340 734 84118 | BT153B-1200TJ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| BT153B-1200T | BT153B-1200TJ | BT153B-1200T |   |
Chemical Content - BT153B-1200T
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
