BT153B-1200T

Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 surface mountable plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.

Features and Benefits
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • Planar passivated for voltage ruggedness and reliability
  • High voltage capacity
  • Very high current surge capability
  • Surface mountable package
Applications
  • DC motor control
  • Power converter
  • Solid State Relay (SSR)
  • Uninterruptible Power Supply (UPS)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT153B-1200T VDRM  repetitive peak off-state voltage       1200 V
VRRM  repetitive peak reverse voltage       1200 V
IT(AV)  average on-state current  half sine wave; Tmb ≤ 119 °C     30 A
IT(RMS)  RMS on-state current  half sine wave; Tmb ≤ 119 °C     47 A
ITSM  non-repetitive peak on-state 
 current		  half sine wave; Tj(init) = 25 °C; tp = 10 ms     350 A
 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     385 A
Tj  junction temperature   -40   150 °C
IGT  gate trigger current  VD = 12 V; IT = 0.1 A; Tj = 25 °C     50 mA
IL  latching current  VD = 12 V; IG = 0.1 A; Tj = 25 °C     100 mA
IH  holding current  VD = 12 V; Tj = 25 °C     80 mA
dVD/dt  rate of rise of off-state voltage  VDM = 804 V; Tj = 150 °C; (VDM = 67% of VDRM);
 exponential waveform; gate open circuit		 1000     V/µs
Datasheet
Chemical Content

Chemical Content - BT153B-1200T

 

Disclaimer

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