BT234X-800E

Planar passivated four quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Features and Benefits
  • Direct triggering from low power drivers and logic ICs
  • High blocking voltage capability
  • Isolated package
  • Planar passivated for voltage ruggedness and reliability
  • Sensitive gate for easy logic level triggering
  • Triggering in all four quadrants
Applications
  • General purpose motor control
  • General purpose switching
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT234X-800E VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 98 °C     4 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     35 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     38.5 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C     10 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C     10 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C     10 mA
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C     25 mA
IH holding current VD = 12 V; Tj = 25 °C     15 mA
VT on-state voltage IT = 6 A; Tj = 25 °C   1.3 1.5 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 80     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 1.5     A/ms
dVcom/dt rate of change of commutating voltage VD = 400 V; Tj = 125 °C; dIcom/dt = 1.8 A/ms; IT = 4 A; gate open circuit 15     V/µs
Datasheet
Chemical Content

Chemical Content - BT234X-800E

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