BTA140-600G0T

Planar passivated four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications.

Features and Benefits
  • High blocking voltage capability
  • Least sensitive gate for highest noise immunity
  • High minimum IGT for guaranteed immunity to gate noise
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in all four quadrants
Applications

 

  • General purpose motor controls
  • Small loads in washing machines
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA140-600G0T VDRM repetitive peak off-state voltage       600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 100 °C     25 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     190 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     209 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 10   50 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 10   50 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 10   50 mA
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C 10   100 mA
IH holding current VD = 12 V; Tj = 25 °C     60 mA
VT on-state voltage IT = 30 A; Tj = 25 °C   1.3 1.55 V
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 200     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 25 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 3 12   A/ms
Datasheet
Chemical Content

Chemical Content - BTA140-600G0T

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