BTA2008-600E

Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers.

Features and Benefits
  • 3Q technology for improved noise immunity
  • Direct gate triggering from low power drivers and logic ICs
  • High commutation capability with sensitive gate
  • High voltage capability
  • Planar passivated for voltage ruggedness and reliability
  • Sensitive gate for easy logic level triggering
  • Triggering in three quadrants only
Applications
  • Low power motor controls
  • Small inductive loads e.g. solenoids, door locks, water valves
  • Small loads in large white goods
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA2008-600E VDRM repetitive peak off-state voltage       600 V
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 70 °C     0.8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     9 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     9.9 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 0.5   10 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 0.5   10 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 0.5   10 mA
IH holding current VD = 12 V; Tj = 25 °C     12 mA
VT on-state voltage IT = 0.85 A; Tj = 25 °C   1.35 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 600     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 0.8 A; dVcom/dt = 10 V/µs; gate open circuit 1.6     A/ms
Datasheet
Chemical Content

Chemical Content - BTA2008-600E

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