BTA201-600B

Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This "series B" triac is designed to commutate the full RMS current at the maximum junction temperature without the aid of a snubber.

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High voltage capability
  • Less sensitive gate for highest noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
  • Very high immunity to false turn-on by dV/dt
Applications
  • General purpose motor control
  • Small loads in washing machines
  • Solenoid drivers
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA201-600B VDRM repetitive peak off-state voltage       600 V
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 54 °C     1 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 16.8 ms     13.7 A
full sine wave; Tj(init) = 25 °C; tp = 20 ms     12.5 A
Tj junction temperature   -40   125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 5   50 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 5   50 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 5   50 mA
IH holding current VD = 12 V; Tj = 25 °C     30 mA
VT on-state voltage IT = 1.4 A; Tj = 25 °C   1.2 1.5 V
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 20 V/s; (snubberless condition); gate open circuit 12     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 10 V/µs; gate open circuit 16     A/ms
Datasheet
Chemical Content

Chemical Content - BTA201-600B

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