BTA201-800ER
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This "series ER" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. It has reverse pinning to that of the standard triac in this package.
Features and Benefits
- 3Q technology for improved noise immunity
- Direct triggering from low power drivers and logic ICs
- High commutation capability with sensitive gate
- High immunity to false turn-on by dV/dt
- High voltage capability
- Planar passivated for voltage ruggedness and reliability
- Reverse pinning version (ER)
- Sensitive gate for easy logic level triggering
- Triggering in three quadrants only
Applications
- General purpose motor control
- Small loads in washing machines
- Solenoid drivers
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BTA201-800ER | VDRM | repetitive peak off-state voltage | 800 | V | |||
IT(RMS) | RMS on-state current | full sine wave; Tlead ≤ 54 °C | 1 | A | |||
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 16.8 ms | 13.7 | A | |||
full sine wave; Tj(init) = 25 °C; tp = 20 ms | 12.5 | A | |||||
Tj | junction temperature | -40 | 125 | °C | |||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 1 | 10 | mA | ||
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 1 | 10 | mA | ||||
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C | 1 | 10 | mA | ||||
IH | holding current | VD = 12 V; Tj = 25 °C | 12 | mA | |||
VT | on-state voltage | IT = 1.4 A; Tj = 25 °C | 1.2 | 1.5 | V | ||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 600 | V/µs | |||
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 20 V/s; (snubberless condition); gate open circuit | 2.5 | A/ms | |||
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 10 V/µs; gate open circuit | 3.5 | A/ms |