BTA202X-1000CT

Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package. This triac is intended for use in motor control circuits where very high blocking voltage can occur. It is used in applications where "high junction operating temperature capability (Tj(max) = 150 °C)" is required.

Features and Benefits
  • 3Q technology for improved noise immunity
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • Over-voltage withstand capability to IEC 61000-4-5
  • Planar passivated for voltage ruggedness and reliability
  • High immunity to false tun on by dV/dt
  • Triggering in three quadrants only
  • Package meets UL94V0 lammability requirement
  • Package is RoHS compliant
  • Package meets UL1557 isolation test requirement rated at 2500V RMS
Applications
  • AC fan, pump and compressor controls
  • Highly inductive, resistive and safety loads
  • Large and small appliances (White Goods)
  • Reversing induction motor controls e.g. vertical axis washing machines
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
 BTA202X-1000CT VDRM  repetitive peak off-state voltage       1000 V
IT(RMS)  RMS on-state current  half sine wave; Th ≤ 136 °C     2 A
ITSM  non-repetitive peak on-state 
 current		  half sine wave; Tj(init) = 25 °C; tp = 20 ms     25 A
 half sine wave; Tj(init) = 25 °C; tp = 16.7 ms     27.5 A
Tj  junction temperature       150 °C
IGT  gate trigger current  VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C     35 mA
 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C     35 mA
 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C     35 mA
IH  holding current  VD = 12 V; Tj = 25 °C     40 mA
VT  on-state voltage  IT = 3  A; Tj = 25 °C      1.5 V
dVD/dt  rate of rise of off-state voltage  VDM = 670 V; Tj = 150 °C; (VDM = 67% of VDRM);
 exponential waveform; gate open circuit		 1000     V/μs
dIcom/dt  rate of change of commutating
 current		  VDM = 400 V; Tj = 150 °C; IT(RMS) = 2 A;
 dVcom/dt = 20 V/μs; gate open circuit;
 snubberless condition		 6     A/ms
 VDM = 400 V; Tj = 150 °C; IT(RMS) = 2 A;
 dVcom/dt = 10 V/μs; gate open circuit		 8     A/ms
 VDM = 400 V; Tj = 150 °C; IT(RMS) = 2 A;
 dVcom/dt = 1 V/μs; gate open circuit		 10     A/ms
Datasheet
Chemical Content

Chemical Content

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.