BTA202X-600D

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package. The "series D" triac balances the requirements of commutation performance and gate sensitivity. This "very sensitive gate" "series D" is intended for interfacing with low power drivers including microcontrollers.

Features and Benefits
  • 3Q technology for improved noise immunity
  • Direct interfacing with low power drivers and microcontrollers
  • Good immunity to false turn-on by dV/dt
  • High commutation capability with very sensitive gate
  • High voltage capability
  • Isolated mounting base package
  • Planar technology for voltage ruggedness and reliability
  • Triggering in three quadrants only
  • Very sensitive gate for easy logic level triggering
Applications
  • General purpose motor controls
  • Large and small appliances (White Goods)
  • Loads such as contactors, circuit breakers, valves, dispensers and door locks
  • Lower-power highly inductive, resistive and safety loads
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA202X-600D VDRM repetitive peak off-state voltage       600 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 110 °C     2 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     14 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     15.4 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 0.25   5 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 0.25   5 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 0.25   5 mA
IH holding current VD = 12 V; Tj = 25 °C     5 mA
VT on-state voltage IT = 3 A; Tj = 25 °C   1.63 2 V
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; RGT1(ext) = 220 μ   350   V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 2 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 1     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 2 A; dVcom/dt = 10 V/µs; gate open circuit 1.2     A/ms
Datasheet
Chemical Content

Chemical Content - BTA202X-600D

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