BTA203-800CT

Planar passivated high commutation three quadrant triac in a TO92 (SOT54) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This series triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.

Features and Benefits
• 3Q technology for improved noise immunity
• High blocking voltage capability
• High commutation capability with maximum false trigger immunity
• High immunity to false turn-on by dV/dt
• Less sensitive gate for high noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
Applications
• General purpose motor control circuits
• Home appliances
• Solenoid drivers
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA203-800CT VDRM  repetitive peak off-state voltage       800 V
IT(RMS)  RMS on-state current full sine wave;     3 A
ITSM  non-repetitive peak on-state 
 current		 full sine wave; tp = 16.7 ms; Tj(init) = 25 °C     30 A
full sine wave; tp = 20 ms; Tj(init) = 25 °C;     27 A
Tj  junction temperature       150 °C
IGT  gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;Tj = 25 °C;     30 mA
VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C;     30  
VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C;     30  
IH  holding current VD = 12 V; Tj = 25 °C;     30 mA
VT on-state voltage IT = 5 A; Tj = 25 °C;   1.4 1.7  
dVD/dt  rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform;gate open circuit		 1500     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 3A;dVcom /dt = 20 V/μs; (snubberless condition); gate open circuit 5      
Datasheet
Chemical Content

Chemical Content - BTA203-800CT

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