BTA204W-800C

Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.

Features and Benefits

3Q technology for improved noise immunity

High commutation capability with maximum false trigger immunity

High immunity to false turn-on by dV/dt

Less sensitive gate for very high noise immunity

Planar passivated for voltage ruggedness and reliability

Surface mountable package

Applications
  • General purpose motor controls
  • Home appliances
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA204W-800C VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tsp ≤ 108 °C     1 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     11 A
full sine wave; Tj(init) = 25 °C; tp = 20 ms     10 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C     35 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C     35 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C     35 mA
IH holding current VD = 12 V; Tj = 25 °C     20 mA
VT on-state voltage IT = 2 A; Tj = 25 °C   0.7 1.5 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (67% of VDRM); exponential waveform; gate open circuit 1000     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 3     A/ms
Datasheet
Chemical Content

Chemical Content - BTA204W-800C

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Disclaimer

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