BTA208-800F

Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package. This "series F" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers in higher noise environments.

Features and Benefits
  • 3Q technology for improved noise immunity
  • Direct triggering from low power drivers and logic ICs
  • High commutation capability
  • High voltage capability
  • Intermediate sensitivity for maximum noise immunity and logic level triggering
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
Applications
  • Electronic thermostats
  • General purpose motor controls
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA208-800F VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C     8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     65 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     71 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C     25 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C     25 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C     25 mA
IH holding current VD = 12 V; Tj = 25 °C     30 mA
VT on-state voltage IT = 10 A; Tj = 25 °C   1.3 1.65 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 70     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 0.1 V/µs; gate open circuit 20     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 10 V/µs; gate open circuit 14     A/ms
Datasheet
Chemical Content

Chemical Content - BTA208-800F

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