BTA208X-600E

Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity. The "sensitive gate" "series E" is intended for interfacing with low power drivers including microcontrollers.

Features and Benefits
  • 3Q technology for improved noise immunity
  • Direct interfacing with low power logic circuits and microcontrollers
  • Good immunity to false turn-on by dV/dt
  • High commutation capability with sensitive gate
  • High voltage capability
  • Isolated mounting base package
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
Applications
  • Electronic thermostats
  • General purpose motor controls
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA208X-600E VDRM repetitive peak off-state voltage       600 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C     8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     65 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     71 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C     10 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C     10 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C     10 mA
IH holding current VD = 12 V; Tj = 25 °C     25 mA
VT on-state voltage IT = 10 A; Tj = 25 °C   1.3 1.65 V
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 60     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 10 V/µs; gate open circuit 5     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 0.1 V/µs; gate open circuit 10     A/ms
Datasheet
Chemical Content

Chemical Content - BTA208X-600E

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