BTA208X-800CT

Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package. This triac is intended for use in motor control circuits where very high blocking voltage can occur. Rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
  •   High junction operating temperature capability (Tj(max) = 150 °C)
  •   Full cycle AC conduction
  •   Over-voltage withstand capability to IEC 61000-4-5
  •   Pin compatible with standard triacs
  •   Planar passivated for voltage ruggedness and reliability
  •   Protective self turn-on capability for high energy transients
  •  Triggering in three quadrants only
  •  Very high immunity to IEC 61000-4-4 fast transient
  •  Package meets UL94V0 flammability requirement
  •  Package is RoHS compliant
  •  Package meets UL1557 isolation test requirement rated at 2500V RMS
Applications
  •   AC fan, pump and compressor controls
  •   Highly inductive, resistive and safety loads
  •   Large and small appliances (White Goods)
  •   Reversing induction motor controls e.g. vertical axis washing machines
  •   Applications subject to high temperature (Tj(max) = 150 °C)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
 BTA208X-800CT VDRM  repetitive peak off-state voltage       800 V
IT(RMS)  RMS on-state current  half sine wave; Th ≤ 103 °C; Fig. 1; Fig. 2; Fig. 3     8 A
ITSM  non-repetitive peak on-state 
 current		  half sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5     80 A
 half sine wave; Tj(init) = 25 °C; tp = 16.7 ms     88 A
Tj  junction temperature       150 °C
IGT  gate trigger current  VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7     35 mA
 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7     35 mA
 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7     35 mA
IH  holding current  VD = 12 V; Tj = 25 °C     40 mA
dVD/dt  rate of rise of off-state voltage  VDM = 536 V; Tj = 125 °C; (VDM =  67% of VDRM);
 exponential waveform; gate open circuit		 200     V/µs
 VDM = 536 V; Tj = 150 °C; (VDM =  67% of VDRM);
 exponential waveform; gate open circuit		 100     V/µs
Datasheet
Chemical Content

Chemical Content - BTA208X-800CT

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