BTA310-800C

Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High voltage capability
  • Less sensitive gate for high noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
Applications
  • Electronic thermostats (heating and cooling)
  • Motor controls e.g. washing machines and vacuum cleaners
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA310-800C VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 106 °C     10 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     85 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     93 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 2   35 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 2   35 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 2   35 mA
IH holding current VD = 12 V; Tj = 25 °C     35 mA
VT on-state voltage IT = 12 A; Tj = 25 °C   1.25 1.5 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 20     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A; dVcom/dt = 10 V/µs; gate open circuit 28     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A; dVcom/dt = 1 V/µs; gate open circuit 40     A/ms
Datasheet
Chemical Content

Chemical Content - BTA310-800C

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.