BTA310X-600E
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers.
Features and Benefits
- 3Q technology for improved noise immunity
- Direct interfacing with low power drivers and microcontrollers
- Good immunity to false turn-on by dV/dt
- High commutation capability with sensitive gate
- High voltage capability
- Isolated mounting base package
- Planar passivated for voltage ruggedness and reliability
- Sensitive gate for easy logic level triggering
- Triggering in three quadrants only
Applications
- Industrial and domestic heating circuits
- Motor controls e.g. washing machines and vacuum cleaners
- Refrigeration and air-conditioner compressor controls
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BTA310X-600E | VDRM | repetitive peak off-state voltage | 600 | V | |||
IT(RMS) | RMS on-state current | full sine wave; Th ≤ 73 °C | 10 | A | |||
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 85 | A | |||
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 93 | A | |||||
Tj | junction temperature | 125 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 0.5 | 10 | mA | ||
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 0.5 | 10 | mA | ||||
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C | 0.5 | 10 | mA | ||||
IH | holding current | VD = 12 V; Tj = 25 °C | 15 | mA | |||
VT | on-state voltage | IT = 12 A; Tj = 25 °C | 1.25 | 1.5 | V | ||
dVD/dt | rate of rise of off-state voltage | VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 50 | V/µs | |||
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit | 2 | A/ms | |||
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A; dVcom/dt = 10 V/µs; gate open circuit | 3 | A/ms | |||||
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A; dVcom/dt = 1 V/µs; gate open circuit | 6 | A/ms |