BTA312B-600D

Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package. This "series D" triac balances the requirements of commutation performance and gate sensitivity. The "very sensitive gate" "series D" is intended for interfacing with low power drivers including microcontrollers.

Features and Benefits
  • 3Q technology for improved noise immunity
  • Direct interfacing with low power drivers and microcontrollers
  • Good immunity to false turn-on by dV/dt
  • High commutation capability with very sensitive gate
  • High voltage capability
  • Planar passivated for voltage ruggedness and reliability
  • Surface mountable package
  • Triggering in three quadrants only
  • Very sensitive gate for easy logic level triggering
Applications
  • Electronic thermostats (heating and cooling)
  • High power motor controls e.g. washing machines and vacuum cleaners
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA312B-600D VDRM repetitive peak off-state voltage       600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 100 °C     12 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     100 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     110 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 2   5 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 2   5 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 2   5 mA
IH holding current VD = 12 V; Tj = 25 °C     10 mA
VT on-state voltage IT = 15 A; Tj = 25 °C   1.3 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 20     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 1     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 10 V/µs; gate open circuit 1.5     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 1 V/µs; gate open circuit 4.5     A/ms
Datasheet
Chemical Content

Chemical Content - BTA312B-600D

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.