BTA312X-800CT

Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High junction operating temperature capability (Tj(max) = 150 °C)
• High immunity to false turn-on by dV/dt
• High voltage capability
• Isolated mounting base package
• Less sensitive gate for very high noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
Applications
• Applications subject to high temperature (Tj(max) = 150 °C)
• Electronic thermostats (heating and cooling)
• High power motor controls e.g. washing machines and vacuum cleaners
• Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA312X-800CT VDRM repetitive peak offstate voltage       800 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 84 °C; Fig. 1; Fig. 2; Fig. 3     12 A
ITSM non-repetitive peak on-state current full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5     100 A
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C     110 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+ Tj = 25 °C; Fig. 7 2   35 mA
VD = 12 V; IT = 0.1 A; T2+ GTj = 25 °C; Fig. 7 2   35 mA
VD = 12 V; IT = 0.1 A; T2- GTj = 25 °C; Fig. 7 2   35 mA
IH holding current VD = 12 V; Tj = 25 °C; Fig. 9     35 mA
Vt on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10   1.3 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 300     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition 20     A/ms
Datasheet
Chemical Content

Chemical Content - BTA312X-800CT

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