BTA316-800C

Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High voltage capability
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
Applications
  • Electronic thermostats (heating and cooling)
  • High power motor controls e.g. washing machines and vacuum cleaners
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA316-800C VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 101 °C     16 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     140 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     150 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 2   35 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 2   35 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 2   35 mA
IH holding current VD = 12 V; Tj = 25 °C     35 mA
VT on-state voltage IT = 18 A; Tj = 25 °C   1.3 1.5 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 15     A/ms
Datasheet
Chemical Content

Chemical Content - BTA316-800C

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