BTA316B-600CT

Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High immunity to false turn-on by dV/dt
• High junction operating temperature capability
• High voltage capability
• Less sensitive gate for very high noise immunity
• Planar passivated for voltage ruggedness and reliability
• Surface mountable package
• Triggering in three quadrants only
Applications
• Applications subject to high temperature
• Electronic thermostats (heating and cooling)
• High power motor controls e.g. washing machines and vacuum cleaners
• Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA316B-600CT VDRM repetitive peak offstate voltage       600 V
I T(RMS) RMS on-state current full sine wave; Tmb ≤ 119 °C; Fig. 1; Fig. 2; Fig. 3     16 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5     140 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     150 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 2   35 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 2   35 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 2   35 mA
IH holding current VD = 12 V; Tj = 25 °C; Fig. 9     35 mA
Vt on-state voltage IT = 18 A; Tj = 25 °C; Fig. 10   1.3 1.5 V
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/μs
VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 300     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit 8     A/ms
Datasheet
Chemical Content

Chemical Content - BTA316B-600CT

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