Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.
- 3Q technology for improved noise immunity
- 2500V RMS isolation voltage capability
- High commutation capability with maximum false trigger immunity
- High immunity to false turn-on by dV/dt
- High junction operating temperature capability
- High voltage capability
- High current capability
- Isolated mounting base package
- Least sensitive gate for highest noise immunity
- Planar passivated for voltage ruggedness and reliability
- Triggering in three quadrants only
- UL1557 certified (Document number E346397)
- Applications subject to high temperature
- Heating controls
- High power motor control
- High power switching
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| BTA330X-800CT | VDRM | repetitive peak off-state voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | full sine wave; Tmb ≤42 °C; | 30 | A | |||
| ITSM | non-repetitive peak on-state current |
full sine wave; Tj(init) = 25 °C; tp = 20 ms; | 270 | A | |||
| full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 297 | A | |||||
| Tj | junction temperature | 150 | °C | ||||
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+:Tj= 25 °C; | 35 | mA | |||
| VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; | 35 | mA | |||||
| VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; | 35 | mA | |||||
| IL | latching current | VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; |
70 | mA | |||
| VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; |
80 | mA | |||||
| VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; |
70 | mA | |||||
| IH | holding current | VD = 12 V; Tj = 25 °C; | 50 | mA | |||
| VT | on-state voltage | IT = 42 A; Tj = 25 °C; | 1.20 | 1.55 | V | ||
| dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit |
2000 | V/µs | |||
| VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit |
1000 | V/µs | |||||
| dIcom/dt | rate of change of commutating current |
VD = 400 V; Tj = 125 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit |
16 | A/ms | |||
| VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit |
13 | A/ms |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| BTA330X-800CT |
SOT186A | HORIZONTAL, RAIL PACK | Volume production | Standard Marking | BTA330X-800CTQ | 9340 737 65127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| BTA330X-800CT | 9340 737 65127 | BTA330X-800CTQ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| BTA330X-800CT | BTA330X-800CTQ | BTA330X-800CT | 
 |
Chemical Content - BTA330X-800CT
As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
