BTA410X-800CT

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High junction operating temperature capability
  • High voltage capability
  • Isolated mounting base package
  • Less sensitive gate for high noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
Applications
  • Applications subject to high temperature
  • Industrial and domestic heating circuits
  • Motor controls e.g. washing machines and vacuum cleaners
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA410X-800CT VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 98 °C     10 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     100 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     110 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 2   35 mA
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 2   35 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 2   35 mA
IH holding current VD = 12 V; Tj = 25 °C     35 mA
VT on-state voltage IT = 15 A; Tj = 25 °C   1.3 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 8     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 10 V/µs; gate open circuit 13     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 1 V/µs; gate open circuit 20     A/ms
Datasheet
Chemical Content

Chemical Content - BTA410X-800CT

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