BTA416X-800BT
Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high Tj operating capability.
Features and Benefits
- 3Q technology for improved noise immunity
- High commutation capability with maximum false trigger immunity
- High immunity to false turn-on by dV/dt
- High surge capability
- High Tj(max)
- Least sensitive gate for highest noise immunity
- Planar passivated for voltage ruggedness and reliability
- Triggering in three quadrants only
- Very high immunity to false turn-on by dV/dt
Applications
- Electronic thermostats (heating and cooling)
- High power motor controls
- Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BTA416X-800BT | VDRM | repetitive peak off-state voltage | 800 | V | |||
IT(RMS) | RMS on-state current | full sine wave; Th ≤ 90 °C | 16 | A | |||
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 160 | A | |||
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 176 | A | |||||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 2 | 50 | mA | ||
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 2 | 50 | mA | ||||
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C | 2 | 50 | mA | ||||
IH | holding current | VD = 12 V; Tj = 25 °C | 60 | mA | |||
VT | on-state voltage | IT = 20 A; Tj = 25 °C | 1.2 | 1.45 | V | ||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 1000 | V/µs | |||
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveeform; gate open circuit | 600 | V/µs | |||||
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (without snubber condition); gate open circuit | 15 | A/ms | |||
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (without snubber condition); gate open circuit | 6 | A/ms |