BTA420B-600BT

Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full rated RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber

Features and Benefits
  • 3Q technology for improved noise immunity
  • High blocking voltage capability
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • Less sensitive gate for very high noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Surface mountable package
  • Triggering in three quadrants only
Applications
  • Heating controls
  • High power motor control
  • High power switching
  • Applications subject to high temperature (Tj(max) = 150 °C)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
BTA420B-600BT VDRM  repetitive peak off-state voltage       600 V
IT(RMS)  RMS on-state current full sine wave; Tmb ≤126 °C;     20 A
ITSM  non-repetitive peak on-state  full sine wave; Tj(init) = 25 °C; tp = 20 ms;     190 A
 current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     209 A
Tj  junction temperature       150 °C
IGT  gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+:Tj= 25 °C; 2   50 mA
VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; 2   50 mA
VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; 2   50 mA
IH  holding current VD = 12 V; Tj = 25 °C;     60 mA
VT  on-state voltage IT = 20 A; Tj = 25 °C;   1.16 1.45 V
dVD/dt  rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000     V/μs
VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1500     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A; 
dVcom/dt = 20 V/µs; gate open circuit		 15     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 20 A; 
dVcom/dt = 20 V/µs; gate open circuit		 35     A/ms
Datasheet
Chemical Content

Chemical Content - BTA420B-600BT

 

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