BTA440Z-1200AT

Planar passivated high commutation three quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series AT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
  • High current TRIAC
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • High voltage capability
  • Least sensitive gate for highest noise immunity
  • Low thermal resistance
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
  • Insulated tab rated at 2500 V rms
Applications
  • Applications subject to high temperature (Tj(max) = 150 °C)
  • High current / high surge applications
  • High power / industrial controls - e.g. heating, motors, lighting
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA440Z-1200AT VDRM repetitive peak off-state voltage       1200 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 106 °C     40 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     400 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     440 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C     75 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C     75 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C     75 mA
IH holding current VD = 12 V; Tj = 25 °C     80 mA
VT on-state voltage IT = 40 A; Tj = 25 °C     1.4 V
dVD/dt rate of rise of off-state voltage VDM = 804 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1500     V/µs
VDM = 804 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 20 A; dVcom/dt = 200 V/µs; (snubberless condition); gate open circuit 35     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 20 A; dVcom/dt = 10 V/µs; (snubberless condition); gate open circuit 180     A/ms
Datasheet
Chemical Content

Chemical Content - BTA440Z-1200AT

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