BUJ100LR

High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package.

Features and Benefits
  • Fast switching
  • High voltage capability
  • Very low switching and conduction losses
Applications
  • Compact fluorescent lamps (CFL)
  • Electronic lighting ballasts
  • Inverters
  • Off-line self-oscillating power supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BUJ100LR VCESM collector-emitter peak voltage VBE = 0 V     700 V
IC collector current DC     1 A
Ptot total power dissipation Tlead ≤ 25 °C     2.1 W
hFE DC current gain IC = 0.5 mA; VCE = 2 V; Tlead = 25 °C 12      
IC = 0.4 A; VCE = 5 V; Tlead = 25 °C 10   30  
IC = 0.8 A; VCE = 5 V; Tlead = 25 °C 5 7.5 20  
tf fall time IC = 1 A; IBon = 200 mA; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load   80   ns
Datasheet
Chemical Content

Chemical Content - BUJ100LR

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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