BYC10D-600

Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.

Features and Benefits
  • Low reverse recovery current and low thermal resistance
  • Reduces switching losses in associated MOSFET
Applications
  • Continuous Current Mode (CCM) Power Factor Correction (PFC)
  • Half-bridge/full-bridge switched-mode power supplies
  • Half-bridge lighting ballasts
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BYC10D-600 VRRM repetitive peak reverse voltage       600 V
IF(AV) average forward current δ = 0.5  ; Tmb ≤ 93 °C; SQW     10 A
IFRM repetitive peak forward current δ = 0.5  ; tp = 25 µs; Tmb ≤ 93 °C; SQW     20 A
IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; SIN     71 A
tp = 10 ms; Tj(init) = 25 °C; SIN     65 A
VF forward voltage IF = 20 A; Tj = 150 °C   1.7 2.2 V
IF = 10 A; Tj = 25 °C   2 2.5 V
IF = 10 A; Tj = 150 °C   1.4 1.8 V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C   15 30 ns
IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   18   ns
Datasheet
Chemical Content

Chemical Content - BYC10D-600

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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