BYC10MD-650P

Hyperfast power diode in a TO252 (DPAK) plastic package.

Features and Benefits
  • Low leakage current
  • Low thermal resistance
  • Low reverse recovery current
  • Reduces switching losses in associated MOSFET or IGBT
Applications
  • Continuous Current Mode (CCM) Power Factor Correction (PFC)
  • Half-bridge/full-bridge switched-mode power supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
 BYC10MD-650P VRRM  repetitive peak reverse voltage       650 V
IF(AV)  average forward current  δ = 0.5; Tmb ≤ 136 °C; square-wave pulse     10 A
IFRM  repetitive peak forward current  δ = 0.5; tp = 25 µs; Tmb ≤ 136 °C; square-wave pulse     20 A
IFSM  non-repetitive peak forward current  tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     135 A
 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     148 A
VF  forward voltage  IF = 10 A; Tj = 25 °C   2.4 3.2 V
 IF = 10 A; Tj = 150 °C   1.5 2.3 V
trr  reverse recovery time  IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C   13   ns
 IF = 10 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C   29   ns
 IF = 10 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C   48   ns
Datasheet
Chemical Content

Chemical Content - BYC10MD-650P

 

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