BYC30-1200P
EEPPTM- Efficiency Enhanced Pt Planar diode in a 2-leads TO220-2L plastic package.
Features and Benefits
• Fast switching
• Reduces switching losses with improved lower reverse recovery charge
• Soft recovery characteristics
• Low thermal resistance
• Low leakage current
• High operating temperature capability (Tj (max) = 175°C)
• Higher IFSM capability
• Planar termination structure
Applications
• Switched-Mode Power Supplies
• Power factor correction diode
• Uninterrupted Power Supply
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BYC30-1200P | VRRM | repetitive peak reverse voltage | 1200 | V | |||
IF(AV) | average forward current | δ = 0.5 ; square-wave pulse; Tmb ≤ 85 °C; Fig. 1; Fig. 2; Fig. 3 | 30 | A | |||
IFRM | repetitive peak forward current | δ = 0.5 ; tp = 25 μs; Tmb ≤ 85 °C; square-wave pulse | 60 | A | |||
IFSM | non-repetitive peak forward current | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 | 270 | A | |||
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; | 300 | A | |||||
VF | forward voltage | IF = 30 A; Tj = 25 °C; Fig. 6 | 2.7 | 3.5 | V | ||
IF = 30 A; Tj = 150 °C; Fig. 6 | 2.1 | V | |||||
trr | reverse recovery time | IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 7 | 65 | ns | |||
IF = 30 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 | 70 | ns | |||||
reverse recovery tim | IF = 30 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 | 153 | ns | ||||
reverse recovery time | IF = 30 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 | 173 | ns |