BYC30M-650P
Hyperfast power diode in a 2-lead TO220 plastic package.
Features and Benefits
- Excellent avalanche energy robustness
- Low leakage current
- Low thermal resistance
- Low reverse recovery current
- Reduces switching losses in associated MOSFET or IGBT
Applications
- Active PFC in air conditioner/EV charger/PV
- Continuous Current Mode (CCM) Power Factor Correction (PFC)
- Half-bridge/full-bridge switched-mode power supplies
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
BYC30M-650P | VRRM | repetitive peak reverse voltage | 650 | V | |||
IF(AV) | average forward current | δ = 0.5; Tmb ≤ 109 °C; square-wave pulse | 30 | A | |||
IFRM | repetitive peak forward current | δ = 0.5; tp = 25 µs; Tmb ≤ 109 °C; square-wave pulse | 60 | A | |||
IFSM | non-repetitive peak forward current | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse | 270 | A | |||
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 297 | A | |||||
VF | forward voltage | IF = 30 A; Tj = 25 °C | 2.05 | 2.75 | V | ||
IF = 30 A; Tj = 150 °C | 1.38 | 1.8 | V | ||||
trr | reverse recovery time | IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C | 20 | 24 | ns | ||
IF = 30 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C | 38 | ns | |||||
IF = 30 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C | 73 | ns |