BYC31MY-650PS

Hyperfast power diode in a IITO220F-2L plastic package

Features and Benefits
  • Soft reverse recovery
  • Fast switching
  • Isolated plastic package
  • Low leakage current
  • Low reverse recovery current
  • Low thermal resistance
  • Reduces switching losses in associated MOSFET or IGBT
  • Package meets UL94V0 which guaranteed by epoxy mold compound
Applications
  • Active PFC in air conditioner
  • High frequency switched-mode power supplies
  • Power Factor Correction (PFC)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
BYC31MY-650PS VRRM repetitive peak reverse voltage       650 V
IF(AV) average forward current δ = 0.5; square-wave pulse     30 A
IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; square-wave pulse     60 A
IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     250 A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     275 A
VF forward voltage IF = 30 A; Tj = 25 °C   1.85 2.50 V
IF = 30 A; Tj = 150 °C   1.45 2.10 V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C   23   ns
Datasheet
Chemical Content

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.