BYV21MB-650P

Ultrafast power diode in a TO263 plastic package

Features and Benefits
  • Low leakage current
  • Low thermal resistance
  • Low reverse recovery current
  • Reduces switching losses in associated MOSFET or IGBT
Applications
  • Active PFC in air conditioner/EV charger/PV
  • Continuous Current Mode (CCM) Power Factor Correction (PFC)
  • Half-bridge/full-bridge switched-mode power supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
 BYV20MB-650P VRRM  repetitive peak reverse voltage       650 V
IF(AV)  average forward current  δ = 0.5; Tmb ≤ 105 °C; square-wave pulse     20 A
IFRM  repetitive peak forward current  δ = 0.5; tp = 25 µs; Tmb ≤ 105 °C; square-wave pulse     40 A
IFSM  non-repetitive peak forward current  tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     180 A
 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     198 A
VF  forward voltage  IF = 20 A; Tj = 25 °C   1.90 2.60 V
 IF = 20 A; Tj = 150 °C   1.50 2.20 V
trr  reverse recovery time  IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C   26   ns
Datasheet
Chemical Content

Chemical Content - BYV20MB-650P

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.